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Effect of well thickness on the Rashba spin splitting and intersubband spinorbit coupling in AlGaN/GaN/AlGaN quantum wells with two subbands

机译:Effect of well thickness on the Rashba spin splitting and intersubband spinorbit coupling in AlGaN/GaN/AlGaN quantum wells with two subbands

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摘要

By projecting the characteristic equation into the subspace of the conduction band, the Rashba spin splitting coefficient for the first two subbands (~(α1, α2)) and the intersubband spinorbit coupling coefficient (~(η12)) in AlGaN/GaN quantum well structure are obtained. Then sizable ~(α1), ~(α2) and ~(η12) in QWs are calculated by solving the Schr?dinger and Poisson equations self-consistently. We find that the internal electric field is crucial for considerable spinorbit coupling effect in III-nitride QWs and the spinorbit coupling coefficient can be greatly modulated by the well thickness. Compared with the Rashba coefficient, the intersubband spinorbit coupling coefficient is basically of the same order of magnitude. The results show the great possibility of spin manipulation in low-dimensional semiconductors, and III-nitride QWs are candidates for the design of spintronic devices

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