Theoretical and experimental work to integrate parabolic intracavity lens into a high-power tapered ridge-waveguide semiconductor laser diode is carried out. A finite difference beam propagation model is used to simulate the laser operation with and without the lens. Focused ion-beam etching is used to integrate the lens with the laser cavity. The lens is designed to compensate for the phase curvature of the incident mode on the output facet. This leads to improved linearity in the light-current characteristics of the device, showing an increase of up to 47 in power slope efficiency, 2-μm broadening in near field pattern, and 1-deg narrowing in the far-field pattern.
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