• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid State Communications >Electrode size dependent IV characteristics and photovoltaic effect in the oxide pn junctions Pr_(0.7)Ca_(0.3)MnO_3Nb: SrTiO_3 and La_(0.7)Ca_(0.3)MnO_3Nb: SrTiO_3
【24h】

Electrode size dependent IV characteristics and photovoltaic effect in the oxide pn junctions Pr_(0.7)Ca_(0.3)MnO_3Nb: SrTiO_3 and La_(0.7)Ca_(0.3)MnO_3Nb: SrTiO_3

机译：Electrode size dependent IV characteristics and photovoltaic effect in the oxide pn junctions Pr_(0.7)Ca_(0.3)MnO_3Nb: SrTiO_3 and La_(0.7)Ca_(0.3)MnO_3Nb: SrTiO_3

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

Hole doped manganites Pr_(0.7)Ca_(0.3)MnO_3 (PCMO) and La_(0.7)Ca_(0.3)MnO_3(LCMO) films have been epitaxially grown on the electron doped Nb:SrTiO_3 (NSTO) substrates by pulsed laser deposition. The rectifying characteristic observed in the currentvoltage (IV) measurement was better in the PCMO/NSTO junction than in the LCMO/NSTO one. A resistance switching behavior in the IV curves was observed with decrease of the Au electrode size and it was thought to be due to Schottky barrier at the NSTO/Au contact. The temperature dependence of the threshold voltage, which shows a dramatic increase of the current, varied slightly around the metalinsulator transition temperature of the LCMO. These results suggest that the measurement of IV characteristics in these pn junctions can be largely affected by the electrode size and the temperature. The photocurrent and the photovoltage across the pn junctions in zero external bias were quickly switched by on/off of visible or UV light. This result suggests that the photo-carriers can be generated in both the p-type and the n-type layers.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号