首页> 外文期刊>optical and quantum electronics >Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes
【24h】

Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes

机译:Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes

获取原文
           

摘要

Single-mode operation of the laser is a basic condition in an optical wide-band transmission link. Lasers stabilized by injection locking showed excellent side-mode suppression. Slight detunings within the locking range between the master laser and slave laser caused by modulation, bias current variations or optical feedback led to unstable behaviour and disturbed the BER of a 1.12 Gbits−1transmission experiment via a 21-km single-mode fibr

著录项

  • 来源
    《optical and quantum electronics》 |1985年第4期|269-275|共页
  • 作者

    G.Großkopf; L.Küller;

  • 作者单位

    Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号