Effects of P3HT concentration on the performance of organic field effect transistors

JIANG Chun-xia; CHENG Xiao-man; WU Xiao-mingYANG Xiao-yanYIN BinHUA Yu-linWEI JunYIN Shou-gen

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Effects of P3HT concentration on the performance of organic field effect transistors

机译：Effects of P3HT concentration on the performance of organic field effect transistors

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摘要

Top-contact organic field effect transistors (OFETs) based on poly(3-hexylthiophene) (P3HT) with different concentrations in chloroform (CHC1_3) are fabricated. The output characteristics indicate that the P3HT concentration has significant influence on the OFET devices. The performance of the devices firstly is enhanced with increasing the P3HT concentration, and then decreases. The optimized devices with the P3HT concentration of 2 mg/mL show the best performance. The fieldeffect mobility is up to 1.4x10~(-2) cm~2/Vs, the threshold voltage (V_t) is as low as -20 V, and the current on/off ratio (I_(on/off)) is close to the, order of 10~4. The results suggest that the P3HT aggregation patterns induced by different concentrations can improve the performance of the OFETs.

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来源
《Optoelectronics letters》 |2011年第1期|0030-0032|共3页
作者
JIANG Chun-xia; CHENG Xiao-man; WU Xiao-mingYANG Xiao-yanYIN BinHUA Yu-linWEI JunYIN Shou-gen;
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作者单位

Institute of Material Physics, Tianjin University of Technology, Tianjin 300384, China;

Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education of China, Tianjin University of Technology, Tianjin 300384, China;

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原文格式 PDF
正文语种英语
中图分类光电子技术、激光技术;
关键词
OFETs; P3HT; Effects;

Effects of P3HT concentration on the performance of organic field effect transistors

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