Band gap and chemically ordered domain structure of a graphene analogue BxCyNz

Venu K.; Kanuri S.; Raidongia K.Hembram K.P.S.S.Waghmare U.V.Datta R.

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Band gap and chemically ordered domain structure of a graphene analogue BxCyNz

机译：Band gap and chemically ordered domain structure of a graphene analogue BxCyNz

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Chemically synthesized few layer graphene analogues of B_xC _yN_z are characterized by aberration corrected transmission electron microscopy and high resolution electron energy loss spectroscopy (HREELS) to determine the local phase, electronic structure and band gap. HREELS band gap studies of a B_xC_yN_z composition reveal absorption edges at 2.08, 3.43 and 6.01 eV, indicating that the B _xC_yN_z structure may consist of domains of different compositions. The K-absorption edge energy position of the individual elements in B_xC_yN_z is determined and compared with h-BN and graphite. An understanding of these experimental findings is developed with complementary first-principles based calculations of the various ordered configurations of B_xC_yN_z.

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《Solid State Communications》 |2010年第46期|2262-2265|共4页
作者
Venu K.; Kanuri S.; Raidongia K.Hembram K.P.S.S.Waghmare U.V.Datta R.;
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作者单位

International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India;

Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India;

Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India;

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正文语种英语
中图分类固体物理学;
关键词
A. BCN; A. Semiconductor; D. Band gap; E. EELS;

Band gap and chemically ordered domain structure of a graphene analogue BxCyNz

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