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Predicting the ionization threshold for carriers in excited semiconductors

机译:Predicting the ionization threshold for carriers in excited semiconductors

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摘要

A simple set of formulas are presented which allow prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells. (c) 2008 Elsevier Ltd. All rights reserved.

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