We report an investigation of the exciton dynamics in self-organized InAs/GaAs quantum dots (QD's) grown by molecular-beam epitaxy on (001)-oriented GaAs substrate. We have combined continuous wave and time resolved luminescence as a function of temperature to obtain quantitative information on the recombination processes in the dots. We have found that the excitonic radiative lifetime of two monolayers InAs QD's is almost independent of temperature. (C) 2003 Elsevier Ltd. All rights reserved. References: 21
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