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首页> 外文期刊>microwave and optical technology letters >Power added efficiency and gain improvement in mesfet amplifiers using an active harmonic loading technique
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Power added efficiency and gain improvement in mesfet amplifiers using an active harmonic loading technique

机译：Power added efficiency and gain improvement in mesfet amplifiers using an active harmonic loading technique

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AbstractA six‐port‐based multiharmonic load‐pull setup is used to characterize a medium‐power MESFET transistor for the design of microwave amplifiers. Complete load‐pull measurements at the fundamental (1.7 GHz) and the second harmonic (3.4 GHz) are obtained for two bias points in class A and AB operation. It is shown that the power gain and the power added efficiency can vary up 0.6 dB and 6, respectively, as the phase of the second harmonic load is changed. © 1994 John Wiley

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