Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies

Choulis SA.; Tomic S.; OReilly EP.Hosea TJC.

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Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies

机译：Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies

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We describe micro-photomodulated reflectance (PR) measurements on a representative dilute-N InGaNAs/GaAs-bascd laser device structure designed to emit at 1.3 mum. The quantum well (QW) transition energies obtained from PR are modeled using a realistic 10-band k(.)p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. From this we are able to determine accurately the band structure and thus predict some important device properties for this InGaNAs/GaAs-based laser device. (C) 2003 Elsevier Science Ltd. All rights reserved. References: 25

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《Solid State Communications》 |2003年第4期|155-159|共5页
作者
Choulis SA.; Tomic S.; OReilly EP.Hosea TJC.;
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正文语种英语
中图分类固体物理学;
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Semiconductors; Electronic band structure; Modulation spectroscopy; Temperature-dependence; Quantum-wells; Nitrogen; Gap; Heterostructures; Spectra; Gainnas; Devices; States;

Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies

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