The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga1-xMnxAs, as well as the demonstration of high spin injection efficiency observed from II-VI and III-V DMS 1,2 have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have pet-formed on spin injection light emitting diodes using an n-type doped II-VI DMS layer as spin aligner and on p-type doped II-VI magnetic heterostructures: Cd1-xMnxTe quantum wells and Zn1-xMnxTe epilayers. (C) 2001 Elsevier Science Ltd. All rights reserved. References: 36
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