Laser-induced etching of Cr-O doped GaAs and wavelength dependent photoluminescence

Mavi  HS; Islam  SS; Rath  SChauhan  BSShukla  AK

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Laser-induced etching of Cr-O doped GaAs and wavelength dependent photoluminescence

机译：Laser-induced etching of Cr-O doped GaAs and wavelength dependent photoluminescence

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The laser-induced chemical etching mechanism of Cr-O doped GaAs (100) substrate in 40 HF-H2O solution is explained by the generation of e-h pairs through defect states in the presence of sub-bandgap photon illumination by using a Nd:YAG Laser (lambda similar to 1.06 mum). The central feature of the laser etching technique is pits initiation by surface defects. The etched GaAs samples are characterised by photoluminescence (PL) spectroscopy. The PL spectrum shows the formation of GaAs nanostructures and chemical reaction products. The shape of the PL band (1.3-1.8 eV) obtained from the top surface depends on the penetration depth of excitation wavelength. An estimate of the nanocrystallites sizes present in the laser etched layer is obtained by quantum confinement model. (C) 2004 Elsevier B.V. All rights reserved.

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《Materials Chemistry and Physics》 |2004年第3期|414-419|共6页
作者
Mavi HS; Islam SS; Rath SChauhan BSShukla AK;
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作者单位

Indian Inst Technol, Dept Phys, New Delhi 110016, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
nanostructures; photoluminescence; semiconductors; POROUS GAAS; MORPHOLOGY; LUMINESCENCE; NANOCRYSTALS; SILICON; SI; LAYERS; GE;

Laser-induced etching of Cr-O doped GaAs and wavelength dependent photoluminescence

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