Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices

PALLAB BHATTACHARYA

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Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices

机译：Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices

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Strained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 μm (48 GHz) and 1.55 μm (26 GHz) by tunneling electrons directly into the lasing sub-band. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to ～7 GHz at room temperature and 23 GHz at 80 K. The properties of these devices are described.

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来源
《Optical and Quantum Electronics》 |2000年第3期|211-225|共15页
作者
PALLAB BHATTACHARYA;
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作者单位

Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
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Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices

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