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Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films

机译：Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films

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Amorphous carbon nitride films (CNx) were grown by reactive radio-frequency (RF) magnetron sputtering of a high-purity graphite target in argon/nitrogen (Ar/N-2) gas mixture. The total discharge pressure was 1 Pa and the total nitrogen partial pressure (NPP) in plasma was between 0 and 0.10. The properties of films were determined using X-ray photoelectron spectroscopy (XPS), infrared absorption, and transmission spectroscopy. The electrical resistivity of films was studied as a function of temperature between 110 and 573 K. The optical gap varies from 0.30 to 0.7 eV in the range of the studied N content in good agreement with the resistivity measurements. The two types of conduction mechanisms can be interpreted basis on the band structure model of the pi electrons in a disordered carbon with the presence of localized states. (C) 2007 Elsevier Ltd. All rights reserved.

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