Magnetic properties of epitaxial oxide heterostructures

Ramachandran  S; Prater  JT; Sudhakar  NKumar  DNarayan  J

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Magnetic properties of epitaxial oxide heterostructures

机译：Magnetic properties of epitaxial oxide heterostructures

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Diluted Magnetic Semiconductors (DMS) are of great interest as injection sources for spin-polarized currents into semiconductors. Epitaxial devices have been synthesized with an intermediate spacer layer of the same semiconductor (zinc oxide, ZnO) used to produce the DMS material (ZnCoO) ensuring a homoepitaxial junction to help reduce the interface states and conduction mismatch. We observe a large magnetoresistance of about 32 in the devices at low temperatures. The present work suggests that spin polarized transport could be achieved with DMS materials acting as the source of injected spins into a non-magnetic host. (C) 2007 Elsevier Ltd. All rights reserved.

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《Solid State Communications》 |2008年第2期|18-22|共5页
作者
Ramachandran S; Prater JT; Sudhakar NKumar DNarayan J;
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作者单位

N Carolina State Univ, Dept Mat Sci & Engn, NSF Ctr Adv Mat & Smart Struct, Raleigh, NC 27695 USA;

Army Res Off, Div Mat Sci, Res Triangle Pk, NC 27709 USA;

N Carolina Agr & Tech State Univ, Dept Mech Engn, Greensboro, NC 27411 USA;

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正文语种英语
中图分类固体物理学;
关键词
spintronics : devices exploiting spin polarized transport or integrated magnetic fields; magnetic semiconductors; magnetotransport phenomena; spin transport through interfaces; ROOM-TEMPERATURE; THIN-FILMS; DEVICE; ZNO;

Magnetic properties of epitaxial oxide heterostructures

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