Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

Sandro Rao; Giuseppe Coppola; Caterina SummonteMariano Antonio GioffreFrancesco Giuseppe Della Corte

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Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

机译：Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

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A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimate the performances in terms of optical losses, voltage-length product, and bandwidth at λ = 1550 nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by plasma enhanced chemical vapor deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrate a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ × Lπ = 19 V × cm allowing the design of shorter devices with respect to p-i-n structure.

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来源
《Optical Engineering》 |2013年第8期|087110-1-087110-5|共5页
作者
Sandro Rao; Giuseppe Coppola; Caterina SummonteMariano Antonio GioffreFrancesco Giuseppe Della Corte;
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作者单位

Institute for Microelectronics and Microsystems--Consiglio Nazionale delle Ricerche (IMM-CNR), Unit of Napoli, Via Castellino 111, Napoli 80132, Italy;

Institute for Microelectronics and Microsystems--Consiglio Nazionale delle Ricerche (IMM-CNR), Unit of Bologna, Via Gobetti 101, Bologna 40129, Italy;

Universita degli Studi "Mediterranea", Dipartimento di Ingegneria dell'Informazione, delle Infrastrutture e dell'Energia Sostenibile" (DIIES), Via Graziella Loc. Feo di Vito, Reggio Calabria 89122, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类计量学;
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Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

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