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Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells

机译：Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells

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摘要

Charge and spin currents generated by ultrafast two-colour laser excitation of semiconductor quantum wells are computed using Bloch equations formulated in the basis of k center dot p wave functions. The optically induced interband and intraband excitations are treated nonperturbatively for a consistent description of phototransport in the high-excitation regime. The analysis shows that the photoexcited charge and spin currents depend on the amplitudes of the incident (omega and 2 omega beams in a highly nonlinear fashion. It is predicted that Rabi flopping should be observable experimentally leading to intensity-dependent changes of the cut-rent directions. (C) 2007 Elsevier Ltd. All rights reserved.

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