Oxidation behavior of TiAlN barrier layers with and without thin metal overlayers for memory capacitor applications

Jaewon Song; Hye Ryeong Kim; Jaehoo Park

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Oxidation behavior of TiAlN barrier layers with and without thin metal overlayers for memory capacitor applications

机译：Oxidation behavior of TiAlN barrier layers with and without thin metal overlayers for memory capacitor applications

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The oxidation behavior of sputtered TiAlN thin-film barrier layers was studied by cross-section transmission electron microscopy. Bare 100-nm-thick TiAlN films on SiO_2/Si began to oxidize from the surface after annealing in air for 10 min from about 550 deg C. Annealing at 700 deg C oxidized half of the layer thickness. A 100-nm-thick Pt overlayer on the barrier layer retarded macroscopic oxidation at 650 deg C. However, a 10-nm-thick Pt overlayer accelerated oxidation as a result of the catalytic dissociation of O_2 molecules to form O atoms, which oxidized the barrier layer at 550 deg C to the same extent as without the thin Pt overlayer at 650 deg C. The effects of other thin metal overlayers, such as Ru and Ir, were also investigated. Ru and Ir did not accelerate TiAlN oxidation due to the absence of catalytic activity.

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《Journal of Materials Research》 |2002年第7期|1789-1794|共6页
作者
Jaewon Song; Hye Ryeong Kim; Jaehoo Park;
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作者单位

School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类工程材料学;
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Oxidation behavior of TiAlN barrier layers with and without thin metal overlayers for memory capacitor applications

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