Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

Park MC.; Huh KS.; Myoung JM.Lee JM.Chang JY.Lee KI.Han SH.Lee WY.

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Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

机译：Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

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We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2002 Elsevier Science Ltd. All rights reserved. References: 18

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《Solid State Communications》 |2002年第2期|11-14|共4页
作者
Park MC.; Huh KS.; Myoung JM.Lee JM.Chang JY.Lee KI.Han SH.Lee WY.;
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正文语种英语
中图分类固体物理学;
关键词
(ga; mn)n; Diluted magnetic semiconductor; Wide bandgap ferromagnetic semiconductor; Plasma-enhanced molecular beam epitaxy; Magnetic semiconductors;

Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

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