Carrier dynamics in GaN at extremely low excited carrier densities

Mickevicius  J; Tamulaitis  G; Vitta  PZukauskas  AShur  MSZhang  JYang  JGaska  R

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Carrier dynamics in GaN at extremely low excited carrier densities

机译：Carrier dynamics in GaN at extremely low excited carrier densities

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Carrier dynamics in GaN was studied using fluorescence lifetime measurement in the frequency domain technique in the temperature range from 8 to 300 K at very low and very high excitation levels. The study was performed in a high-quality GaN epilayer exhibiting a room-temperature nonequilibrium carrier lifetime of 2 ns, which was determined by a light-induced transient grating (four-wave mixing) technique. The results reveal the roles of donor-acceptor pair recombination and conduction band-acceptor recombination in yellow luminescence band formation. (C) 2007 Elsevier Ltd. All rights reserved.

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来源
《Solid State Communications》 |2008年第6期|312-315|共4页
作者
Mickevicius J; Tamulaitis G; Vitta PZukauskas AShur MSZhang JYang JGaska R;
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作者单位

Vilnius State Univ, Inst Mat Sci & Appl Res, LT-10222 Vilnius, Lithuania;

Rensselaer Polytech Inst, Dept ECE & CIE, Troy, NY 12180 USA;

Sensor Elect Technol Inc, Columbia, SC 29209 USA;

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正文语种英语
中图分类固体物理学;
关键词
semiconductors; light-induced transient grating technique; frequency domain lifetime measurements; VAPOR-PHASE-EPITAXY; FREESTANDING GAN; YELLOW LUMINESCENCE; DEEP LEVELS; DOPED GAN; PHOTOLUMINESCENCE; TRANSITIONS; ACCEPTOR; DEFECTS; CARBON;

Carrier dynamics in GaN at extremely low excited carrier densities

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