...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Chemistry and Physics >Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE
【24h】

Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE

机译：Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

The unstrained and high quality GaInAsSb/InP single quantum well (SQW) is successfully grown by MOVPE on InP substrate. High resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) with Cs+ ions as the primary beam are used for evaluation of material quality and determination of layer thickness. Low temperature (8 K) photoluminescence (PL) spectroscopy is used to characterize the SQW structure. Thermal annealing effect on the PL properties of GaInAsSb/InP SQW structure is performed and discussed in this paper. After 30 s annealing with temperatures 650, 750 and 850degreesC, the PL peak intensity is not changed and the PL peak energy blue shifts. Furthermore, the increased PL peak full width at half maximum (FWHM) after annealing indicates that the inhomogeneous alloyed region increases. (C) 2004 Published by Elsevier B.V.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号