Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

Nakanotani H.; Kakizoe H.; Adachi C.

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Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

机译：Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

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摘要

The formation of interfacial hole carriers between a rubrene single crystal and a 2 nm-thick molybdenum oxide layer resulted in the formation of a highly conductive interface with a high electrical conductivity of 0.16 S/cm and a very small activation energy of 0.03 eV. This highly conductive interface enabled charge injection and accumulation of a high drain current in the recombination zone in ambipolar transistors, resulting in a significant reduction of the driving voltage with high, balanced hole and electron mobilities of 1.1 and 0.5 cm~2V s, respectively.

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来源
《Solid State Communications》 |2010年第1期|93-96|共4页
作者
Nakanotani H.; Kakizoe H.; Adachi C.;
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作者单位

Center for Future Chemistry, Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
A. Organic crystals; D. Electronic transport; D. Surface and interface;

Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

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