Growth of defect-free GaP nanowires

Elena Husanu; Daniele Ercolani; Mauro GemmiLucia Sorba

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Growth of defect-free GaP nanowires

机译：Growth of defect-free GaP nanowires

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The crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was investigated as a function of group V flux and growth temperature. By increasing the tertiarybutyl phosphine flux we obtained nanowires with a stacking defect-free wurtzite crystal structure. Variation of growth temperature also had a profound impact on the crystal structure. Lowering the growth temperature from 600 to 560℃ and keeping constant both triethylgallium and tertiarybutyl phosphine precursor fluxes, the crystal structure of GaP NWs was drastically improved from a highly defective intergrowth of zinc-blende and wurtzite to a wurtzite crystal structure free of stacking defects. These results are compared to current literature on GaP NW growth, and we suggest that the low V/III ratio is the key ingredient for the high crystal quality of our GaP nanowires.

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来源
《Nanotechnology》 |2014年第20期|205601-1-205601-6|共6页
作者
Elena Husanu; Daniele Ercolani; Mauro GemmiLucia Sorba;
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作者单位

Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, P.zza S. Silvestro 12, I-56127 Pisa, Italy;

NEST Scuola Normale Superiore and Istituto di Nanoscienze-CNR, P.zza S. Silvestro 12, I-56127 PISA, Italy;

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原文格式 PDF
正文语种英语
中图分类特种结构材料;
关键词
gallium phosphide; nanowire; wurtzite; defect; chemical beam epitaxy;

Growth of defect-free GaP nanowires

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