Spinorbit coupling and g-factor of X-valley in cubic GaN

Shen K.; Fu J.Y.; Wu M.W.

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Spinorbit coupling and g-factor of X-valley in cubic GaN

机译：Spinorbit coupling and g-factor of X-valley in cubic GaN

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摘要

We report our theoretical investigation on the spinorbit coupling and g-factor of the X-valley in cubic GaN. We find that the spinorbit coupling coefficient from sp~3d~5s* tight-binding model is 0.029 eV, which is comparable with that in cubic GaAs. By employing the k·p theory, we find that the g-factor in this case is only slightly different from the free electron g-factor. These results are expected to be important for the on-going study on spin dynamics far away from equilibrium in cubic GaN

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来源
《Solid State Communications》 |2011年第24期|1924-1926|共3页
作者
Shen K.; Fu J.Y.; Wu M.W.;
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作者单位

Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China;

Department of Physics, Qufu Normal University, Qufu, Shandong, 273165, China;

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正文语种英语
中图分类固体物理学;
关键词
A. Semiconductor; D. Spinorbit effects;

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Spinorbit coupling and g-factor of X-valley in cubic GaN

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