Defect induced ferromagnetism in carbon-doped ZnO thin films

Akbar S.; Hasanain S.K.; Abbas M.Ozcan S.Ali B.Shah S.I.

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Defect induced ferromagnetism in carbon-doped ZnO thin films

机译：Defect induced ferromagnetism in carbon-doped ZnO thin films

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We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation. Magnetization, Hall effect, X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO. The samples were observed to have n-type conduction with the carrier concentration increasing with C doping. XPS does not give any evidence for C substituted at the O site, and is more consistent with the formation of CO bonds and with the presence of C primarily in the +4 state. It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C~(4+)).

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《Solid State Communications》 |2010年第1期|17-20|共4页
作者
Akbar S.; Hasanain S.K.; Abbas M.Ozcan S.Ali B.Shah S.I.;
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作者单位

Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan;

Department of Physics, COMSATS Institute of Information Technology-CIIT, Islamabad, Pakistan;

Department of Physics Engineering, Hacettepe University Beytepe, Ankara 06800, TurkeyDepartment of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States;

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正文语种英语
中图分类固体物理学;
关键词
A. Semiconductor; A. Thin films; C. Grain boundaries; C. Point defects;

Defect induced ferromagnetism in carbon-doped ZnO thin films

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