Impact of Probe-to-Pad Contact Degradation on the High Frequency Characteristics of RF MOSFETs and Guidelines to Avoid It

E. P. Vandamme; D. Schreurs; C. van Dinther

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Impact of Probe-to-Pad Contact Degradation on the High Frequency Characteristics of RF MOSFETs and Guidelines to Avoid It

机译：Impact of Probe-to-Pad Contact Degradation on the High Frequency Characteristics of RF MOSFETs and Guidelines to Avoid It

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摘要

Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

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来源
《International journal of RF and microwave computer-aided engineering》 |2001年第3期|114-12|共9页
作者
E. P. Vandamme; D. Schreurs; C. van Dinther;
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作者单位

IMEC VZW, Kapeldreef 75, B-3001 Leuven, Belgium;

K. U. Leuven, ESAT-Telemic, Kard. Mercierlaan 94, B-3001 Heverlee, Belgium;

Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands;

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原文格式 PDF
正文语种英语
中图分类计算技术、计算机技术;
关键词
scattering parameters measurement; MOSFETs; microwave measurements; reliability testing; MOSFET RF modelling;

Impact of Probe-to-Pad Contact Degradation on the High Frequency Characteristics of RF MOSFETs and Guidelines to Avoid It

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