Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers

Park Y.S.; Holmes M.J.; Taylor R.A.Lee S.-W.Jeon S.-R.Yoon I.T.Shon Y.

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Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers

机译：Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers

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We investigated the carrier transition properties of the GaN/InGaN/GaN single quantum well bounded by AlGaN barriers. In order to confirm the carrier transition coming from the single quantum well, the single quantum well layer was etched by reactive ion etching method. The structural property of the samples was characterized by high resolution X-ray diffraction measurements. In micro-photoluminescence measurements, it is clearly shown that the donor bound exciton transition of the single quantum well sample was redshifted compared to the etched one due to strain. Moreover, a lot of peaks were observed below the GaN band gap energy due to carrier localization in the InGaN/GaN single quantum well, including carrier localization center and quantum confined states. The excitation power dependence and time resolved photoluminescence spectra were investigated to characterize the optical transition of the single quantum well

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《Solid State Communications》 |2011年第24期|1941-1944|共4页
作者
Park Y.S.; Holmes M.J.; Taylor R.A.Lee S.-W.Jeon S.-R.Yoon I.T.Shon Y.;
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作者单位

Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, United Kingdom;

Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, South Korea;

Division of Quantum Phases and Devices, Department of Physics, Kunkuk University, Seoul 143-701, South KoreaLED Business Sector /LED Fusion Technology Team, Korea Photonics Technology Institute, Gwangju 500-779, South Korea;

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正文语种英语
中图分类固体物理学;
关键词
A. III-nitride semiconductors; C. Photoluminescence and time-resolved photoluminescence; D. Carrier dynamics;

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers

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