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首页> 外文期刊>optical and quantum electronics >The influence of the carrier-dependent shifts of the longitudinal modes and the gain profile on the emission characteristics of a pulsed AlxGa1−xAs double heterostructure laser
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The influence of the carrier-dependent shifts of the longitudinal modes and the gain profile on the emission characteristics of a pulsed AlxGa1−xAs double heterostructure laser

机译:The influence of the carrier-dependent shifts of the longitudinal modes and the gain profile on the emission characteristics of a pulsed AlxGa1−xAs double heterostructure laser

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摘要

The wavelength of the longitudinal modes of a stripe geometry DH laser excited by current pulses is shifted according to the variation of the optical power. The magnitude of the spectral shift and the different form of these patterns are due to the mutual influence of individual modes. The time-varying carrier concentration gives rise to a time-dependent (effective) refractive index which alters the resonance condition for the modes. The spectral broadening of the modes, spanning nearly one mode separation, is due to the spectral shift of the modes which in turn depend on the variation of the emitted power. The longitudinal modes are sequentially excited because the gain profile changes its wavelength position with varying carrier concentration.

著录项

  • 来源
    《optical and quantum electronics》 |1984年第4期|297-305|共页
  • 作者

    P.Glas; P.Hartwig; G.Erbert;

  • 作者单位

    Akademie der Wissenschaften der DDR;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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