A parabolic model of the formg=αn2+βn+γhas been suggested for long-wavelength InGaAsP laser diode peak-grain coefficient variations with the carrier density. The parametersα,βandγ, which are dependent on doping, bandgap-wavelength and temperature, have been calculated by applying the least-mean-square method to fit the results of the Lasher and Stern theory of the recombination in semiconductors. p This model is superior to the commonly used linear model in accuracy and range of applicab
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