Vacancy cluster-limited electronic transport in metallic carbon nanotube

Zeng H.; Leburton J.-P.; Hu H.Wei J.

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Vacancy cluster-limited electronic transport in metallic carbon nanotube

机译：Vacancy cluster-limited electronic transport in metallic carbon nanotube

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We investigate the electronic properties of metallic (7,7) carbon nanotubes (CNT) in the presence of a variety of tetra- and hexa-vacancy defects, by using the first principles density functional theory (DFT) combined with the non-equilibrium Green's function technique. From the view point of energetic stability large vacancies tend to split into pentagon and heptagon (57) defects. However, this does not preclude the presence of "holes" in the carbon nanotube by the nanoelectronic lithography technique. We show that the states linked to large vacancies hybridize with the extended states of the nanotubes to modify their band structure. As a consequence, the hole-like defects in the CNT lead to more prominent electronic transport compared to the situation in the defective CNT consisting of pentagonheptagon pair defects. Our study suggests the possibility to improve the electronic properties of a defective carbon nanotube via morphological modifications induced by irradiation techniques.

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来源
《Solid State Communications》 |2010年第1期|9-12|共4页
作者
Zeng H.; Leburton J.-P.; Hu H.Wei J.;
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作者单位

College of Physical Science and Technology, Yangtze University, Jingzhou, Hubei, 434023, China;

Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States;

College of Physics and Mircoelectronic Science, Hunan University, Changsha, Hunan, 410082, ChinaCollege of Mathematics and Physics, Chongqing University of Technology, Chongqing 400054, China;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
A. Carbon nanotube; A. Vacancy cluster; D. Electronic transport; E. First principle;

Vacancy cluster-limited electronic transport in metallic carbon nanotube

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