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>Origin of Conductivity Threshold in the Solid Electrolyte Glass System: formula formulatype='inline'tex$( hbox{Ag}_{2} hbox{S})_{x}( hbox{As}_{2} hbox{S}_{3})_{1-x}$/tex /formula
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Origin of Conductivity Threshold in the Solid Electrolyte Glass System: formula formulatype='inline'tex$( hbox{Ag}_{2} hbox{S})_{x}( hbox{As}_{2} hbox{S}_{3})_{1-x}$/tex /formula
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机译：Origin of Conductivity Threshold in the Solid Electrolyte Glass System: formula formulatype="inline"tex$( hbox{Ag}_{2} hbox{S})_{x}( hbox{As}_{2} hbox{S}_{3})_{1-x}$/tex /formula
The electrical conductivity of $( hbox{Ag}_{2} hbox{S})_{x}( hbox{As}_{2} hbox{S}_{3})_{1-x}$ glasses increases to display a step-like jump of nearly five orders of magnitude in the narrow composition range, $9 #x226A; x #x226A; 15$ range. To elucidate the origin of this threshold behavior, we have now examined the molecular structure of these glasses in modulated-differential scanning calorimetry (MDSC) and Raman scattering experiments. Our MDSC results reveal bimodal glass transition temperatures (T $_{rm g}$s), a $hbox{low-T}_{rm g}$ and a $hbox{high-T}_{rm g}$ in the $7 #x226A; x #x226A; 40$ range but unimodal ones outside this range. The $hbox{low-T}_{rm g}$ phase bears a similarity to that of the stoichiometric glass at $x = 1/2$ , or $hbox{AgAsS}_{2}$ , and we identify it with a Ag-rich phase formed in these glasses once $x > 7$. The Ag-rich phase is thought to percolate near $xsim 9$, and to contribute to the large jump in conductivity of the glasses. The $hbox{high-T}_{rm g}$ phase represents a semiconducting $ hbox{As}_{2} hbox{S}_{3}$ glass phase alloyed with a few mole percent of $ hbox{Ag}_{2} hbox{S}$ , and it displays a reversibility window in the $8 #x226A; x #x226A; 13$ range. The -semico
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