Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

Liu Y; Wang JQ; Xing HZTang NYLv BMao HBZhao QZhang YZhu ZQ

首页> 外文期刊>Solid State Communications >Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

【24h】

Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

机译：Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.

著录项

来源
《Solid State Communications》 |2009年第4期|156-159|共4页
作者
Liu Y; Wang JQ; Xing HZTang NYLv BMao HBZhao QZhang YZhu ZQ;
展开▼
作者单位

E China Normal Univ, Dept Elect Sci & Engn, Shanghai 200062, Peoples R China.;

Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China.;

Shanghai Univ Elect Power, Shanghai 200090, Peoples R China.;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
GaMnN; Resonant-tunneling diode; Magnetocurrents;

Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations

摘要

著录项

相关主题

期刊订阅