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>Method for the preparation of dielectric films by activated reactive evaporation using resistively heated sources
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Method for the preparation of dielectric films by activated reactive evaporation using resistively heated sources
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机译：Method for the preparation of dielectric films by activated reactive evaporation using resistively heated sources
A simple method is reported for the deposition of dielectric films using activated reactive evaporation (ARE). This method uses heated tungsten wire as an electron emitter and does not require a magnetic field for stabilizing the plasma, as required in an earlier reported method. The reactive gas pressure during coating is 5times;10minus;4Torr. An xhyphen;ray diffractogram and optical transmission spectra of Bi2O3films deposited at a rate ape;50 Aring;/s using this apparatus are also presented.
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