Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

Tang Y.-T.; Chuu D.-S.; Lin K.-C.

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Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

机译：Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

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摘要

We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electronphonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.

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来源
《Solid State Communications》 |2010年第1期|87-92|共6页
作者
Tang Y.-T.; Chuu D.-S.; Lin K.-C.;
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作者单位

Department of Electrophysics, National Chiao Tung University, Hsinchu 30013, Taiwan;

Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
C. Electronic transport; C. Electronphonon interactions; C. Phonon-assisted tunneling;

Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

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