In this letter, a novel optical switch based on vanadium dioxide (VO2) thin film on substrates of silicon ( 100) has been fabricated. The vanadium dioxide thin films were deposited by reactive ion beam sputtering followed by a post-annealing. The testing result shows the insertion loss of the optical switches is about 1 - 2 dB, and the extinction ratio is up to 26 dB. The speed of the switches is as fast as 60 ns. References: 12
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