A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

Haiwen Liu; Xiaowei Sun; Zhengfan LiJunfa Mao

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A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

机译：A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

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摘要

An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S-parameters in the frequency range of 1-12 GHz under extracted-bias conditions. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance. The method yields a deviation of less then 5 between the measured and modeled S-parameters.

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来源
《International journal of RF and microwave computer-aided engineering》 |2004年第5期|447-452|共6页
作者
Haiwen Liu; Xiaowei Sun; Zhengfan LiJunfa Mao;
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作者单位

Department of Electronic Engineering, Shanghai Jiaotong University, Shanghai 200030, China;

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

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原文格式 PDF
正文语种英语
中图分类计算技术、计算机技术;
关键词
AlGaIn/GaAs HBT; parameter extraction; small-signal model;

A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

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