Bubble Razor: Eliminating Timing Margins in an ARM Cortex-M3 Processor in 45 nm CMOS Using Architecturally Independent Error Detection and Correction

Fojtik M.; Fick D.; Kim Y.Pinckney N.Harris D. M.Blaauw D.Sylvester D.

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Bubble Razor: Eliminating Timing Margins in an ARM Cortex-M3 Processor in 45 nm CMOS Using Architecturally Independent Error Detection and Correction

机译：Bubble Razor: Eliminating Timing Margins in an ARM Cortex-M3 Processor in 45 nm CMOS Using Architecturally Independent Error Detection and Correction

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摘要

We propose Bubble Razor, an architecturally independent approach to timing error detection and correction that avoids hold-time issues and enables large timing speculation windows. A local stalling technique that can be automatically inserted into any design allows the system to scale to larger processors. We implemented Bubble Razor on an ARM Cortex-M3 microprocessor in 45 nm CMOS without detailed knowledge of its internal architecture to demonstrate the technique's automated capability. The flip-flop based design was converted to two-phase latch timing using commercial retiming tools; Bubble Razor was then inserted using automatic scripts. This system marks the first published implementation of a Razor-style scheme on a complete, commercial processor. It provides an energy efficiency improvement of 60 or a throughput gain of up to 100 compared to operating with worst case timing margins.

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来源
《IEEE Journal of Solid-State Circuits》 |2013年第1期|66-81|共16页
作者
Fojtik M.; Fick D.; Kim Y.Pinckney N.Harris D. M.Blaauw D.Sylvester D.;
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作者单位

University of Michigan,;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类基本电子电路;
关键词
Clocks; Delay; Error correction; Latches; Pipeline processing; Random access memory; Adaptive circuits; dynamic voltage and frequency scaling (DVFS); error correction; time borrowing; timing speculation; two-phase latches; variation tolerance;

Bubble Razor: Eliminating Timing Margins in an ARM Cortex-M3 Processor in 45 nm CMOS Using Architecturally Independent Error Detection and Correction

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