An improved bevel crosshyphen;sectioning method is presented which makes it possible to measure the thickness of relatively thin semiconductor surface layers. A staining procedure to enhance the contrast of the layers for two material systems, GaAs/GaAlAs and InP/InGaAsP, has been developed. Applying a newly constructed ballhyphen;lappinghyphen;apparatus, an ordinary optical microscope and a surfacehyphen;profiler, relatively thin MBEhyphen;grown quantumhyphen;well layers (6.5 nm) can rapidly be measured with an accuracy of better than 10percnt;, which is improved for thicker, normal layers (1000 nm) to better than 5percnt;.
展开▼
