670-NM ALGAINP GAINP STRAINED MULTI-QUANTUM WELL LASER DIODE WITH HIGH CHARACTERISTIC TEMPERATURE (T(0))

Kim JS.; Choi WJ.; Chang JH.Cho IS.Choi WT.Yoo TK.Yang M.

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670-NM ALGAINP GAINP STRAINED MULTI-QUANTUM WELL LASER DIODE WITH HIGH CHARACTERISTIC TEMPERATURE (T(0))

机译：670-NM ALGAINP GAINP STRAINED MULTI-QUANTUM WELL LASER DIODE WITH HIGH CHARACTERISTIC TEMPERATURE (T(0))

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摘要

A 670 nm AlGalnP/GalnP strained multi-quantum well laser diode with a high characteristic temperature (T0) has been achieved by optimization of quantum well structures and the metal-organic chemical vapour deposition process. The hole concentration of 5 x 10(17) cm-3 in the p-AlGalnP cladding layer on a (100) 5-degrees off GaAs substrate has been obtained with very small ratio, 0.35, of mole flow rate of zinc source to the group III sources (DEZn/III of 0.35. The threshold current and maximum temperature for continuous wave operation of lasers with cavity length of 300 mum have been measured as 45 mA and 80-degrees-C, respectively. The characteristic temperature (T0) of the lasers has been measured as high as 153 K. The laser without facet protections could operate for more than 1000h at 50-degrees-C and 5 mW. References: 20

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来源
《Optical and Quantum Electronics》 |1995年第5期|435-440|共6页
作者
Kim JS.; Choi WJ.; Chang JH.Cho IS.Choi WT.Yoo TK.Yang M.;
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作者单位

LG ELECTR RES CTR 16 WOOMYEON DONG SEOUL 137140 SOUTH KOREA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种英语
中图分类光学;
关键词
Chemical vapor-deposition; Threshold current; Visible lasers; Dependence; Zn; Wavelength; Operation; Movpe;

670-NM ALGAINP GAINP STRAINED MULTI-QUANTUM WELL LASER DIODE WITH HIGH CHARACTERISTIC TEMPERATURE (T(0))

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