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>Improved planar radio frequency inductively coupled plasma configuration in plasma immersion ion implantation
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Improved planar radio frequency inductively coupled plasma configuration in plasma immersion ion implantation
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机译：Improved planar radio frequency inductively coupled plasma configuration in plasma immersion ion implantation
Plasmas with higher density and better uniformity are produced using an improved planar radio frequency (rf) inductively coupled plasma configuration in plasma immersion ion implantation (PIII). An axial magnetic field is produced by external electromagnetic coils outside the discharge chamber. The rf power can be effectively absorbed by the plasma in the vicinity of the electron gyrofrequency due to the enhanced resonant absorption of electromagnetic waves in the whistler wave range, which can propagate nearly along the magnetic field lines thus greatly increases the plasma density. The plasma is confined by a longitudinal multipolar cusp magnetic field made of permanent magnets outside the process chamber. It can improve the plasma uniformity without significantly affecting the ion density. The plasma density can be increased from 3×10~(9) to 1×10~(10) cm~(-3) employing an axial magnetic field of several Gauss at 1000 W rf power and 5×10~(-4) Torr gas pressure. The nonuniformity of the plasma density is less than 10 and can be achieved in a process chamber with a diameter of 600 mm. Since the plasma generation and process chambers are separate, plasma extinction due to the plasma sheath touching the chamber wall in high-energy PIII can be avoided. Hence, low-pressure, high-energy, and high-uniformity ion implantation can be accomplished using this setup.
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