Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temperature

Wenjun Zhang; Seiichiro Matsumoto; Quan LiIgor BelloShuit-Tong Lee

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Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temperature

机译：Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temperature

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摘要

In the deposition of cubic boron nitride (cBN) films by DC-bias-assisted DC jet chemical vapor deposition in an Ar-N_2-BF_3-H_2 gas system, the balance between growth and etching and its relation to the deposition conditions were investigated. A tow-step process was designed to optimize the nucleation and growth separately, and a critical bias voltage for the growth of cBN after nucleation was observed. It was found that etching occurred when the bias voltage was below this critical value. Under optimized conditions, the crystallinity and crystal size of the cBN films were improved during the second step. Furthermore, cBN films showing clear crystal facets were obtained.

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来源
《Advanced functional materials》 |2002年第4期|250-254|共5页
作者
Wenjun Zhang; Seiichiro Matsumoto; Quan LiIgor BelloShuit-Tong Lee;
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作者单位

Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong;

Advanced Materials Laboratory National Institute for Materials Science Namiki, Tsukuba, 305-0044 (Japan);

Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science City University of Hong Kong Kowloon (Hong Kong);

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正文语种英语
中图分类无线电电子学、电信技术;
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Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temperature

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