...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Journal of Solid-State Circuits >A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of 0.15 C (3 ) From 55 C to 125 C
【24h】

A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of 0.15 C (3 ) From 55 C to 125 C

机译：A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of 0.15 C (3 ) From 55 C to 125 C

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相关主题

摘要

This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy- efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of $pm 0.15^{circ}{hbox{C}}$ $(3sigma)$ from $-55^{circ}{hbox{C}}$ to 125$^{circ}{hbox{C}}$ . Over the same range, devices from a second lot achieved an inaccuracy of $pm 0.25^{circ}{hbox{C}}$ $(3sigma)$ in both ceramic and plastic packages. The sensor occupies 0.08 $hbox{mm}^{2}$ in a 0.16 $muhbox{m}$ CMOS process, draws 3.4 $muhbox{A}$ from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.

著录项

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号