首页>
外文期刊>journal of applied physics
>Electrical characteristics at 4.2 K and high magnetic fields in metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistors utilizing sputterhyphen;deposited gatehyphen;oxide films
【24h】
Electrical characteristics at 4.2 K and high magnetic fields in metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistors utilizing sputterhyphen;deposited gatehyphen;oxide films
展开▼
机译：Electrical characteristics at 4.2 K and high magnetic fields in metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistors utilizing sputterhyphen;deposited gatehyphen;oxide films
Characteristics of metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistors (MOSFETs) with sputterhyphen;deposited gatehyphen;oxide films at 4.2 K under high magnetic fields of up to 10 T are presented. The gatehyphen;oxide films are deposited by oxygenhyphen;argon sputtering of an SiO2target at 200thinsp;deg;C, much lower than a conventional thermal oxidation temperature of 1000thinsp;deg;C. The MOSFET using a sputterhyphen;deposited film has a Hall mobility of 7000 cm2/Vthinsp;s at 4.2 K. The quantum Hall effect and Shubnikovndash;de Haas oscillations are successfully observed. The magnetic angle dependence of the magnetoresistance and the Shubnikovndash;de Haas oscillation indicate that this MOSFET has a twohyphen;dimensional electron gas. Analysis of the perpendicular magnetoresistance and the quantum Hall effect indicates that this MOSFET has a weakly localized state similar to that of thermal oxide film.
展开▼
