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>Effect of scanning speed on the stability of the solidification interface during zonehyphen;melting recrystallization of thin silicon films
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Effect of scanning speed on the stability of the solidification interface during zonehyphen;melting recrystallization of thin silicon films
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机译：Effect of scanning speed on the stability of the solidification interface during zonehyphen;melting recrystallization of thin silicon films
The stability of the moving solidification interface of thin silicon films undergoing zonehyphen;melting recrystallization with a graphite strip heater was examined numerically. Unstable growth of the interface occurred for scanning speeds ge;250 mgr;m/s for typical processing conditions. The growth rate of the perturbed interface varied with scanning speed, showing a distinct increase at a velocity of 400 mgr;m/s.
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