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首页> 外文期刊>Proceedings of the National Academy of Sciences of the United States of America. >Evidence for a conducting surface ground state in high-quality single crystalline FeSi
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Evidence for a conducting surface ground state in high-quality single crystalline FeSi

机译：Evidence for a conducting surface ground state in high-quality single crystalline FeSi

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摘要

We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8-400 K. The electrical resistivity rho(T) can be described by activated behavior with an energy gap Delta = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At similar to 19 K, rho(T) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.

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