Electrical and crystallographical properties of MgO thin films onSi substrates prepared using RF sputtering system with various growthrates were characterized. The surface morphologies of MgO thin filmprepared at low growth rate of ~ 0.4 mt/min was confirmed to be verysmooth by the FE-SEM observation. SAD pattern shows that MgO thinfilms could be epitaxially grown on Si(001) substrates and that thein-plane alignment of MgO/Si structures prepared at low growth ratewas MgO 100 Si 110 . In C-V measurement of MgO/Si structuresannealed at 400 deg C, a low interface trap density of the order of10~11/cm eV was achieved with no formation of a low-dielectric layerat the MgO/Si interface. These results indicate that MgO thin filmsare applicable as an insulating intermediate layer for the epitaxialgrowth of functional ceramic films on Si substrates.
展开▼
