Enhanced near-infrared photodetection with avalanche gain in silicon microdisk resonators integrated with p-n diodes

Haike Zhu; Linjie Zhou; Rui YangXinwan LiJianping Chen

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Enhanced near-infrared photodetection with avalanche gain in silicon microdisk resonators integrated with p-n diodes

机译：集成了p-n二极管的硅微盘谐振器中具有雪崩增益的增强型近红外光探测

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We investigate the photocurrent generation by two-photon absorption effect in silicon microdisk resonators integrated with p-n diodes. The photocurrent is quite dependent on the p-n junction position with respect to the whispering gallery mode. Avalanche gain increases significantly when the bias exceeds -19 V, leading to considerable enhancement of photocurrent. At -22 V bias with on-chip optical power of 44.7 μW, the responsivity exceeds 1 A/W with an avalanche gain of 188 while the dark current is more than 50 times lower than the photocurrent.

机译：我们研究了与p-n二极管集成的硅微盘谐振器中双光子吸收效应产生的光电流。光电流很大程度上取决于相对于耳语画廊模式的p-n结位置。当偏置超过-19 V时，雪崩增益显著增加，导致光电流显著增强。在-22 V偏置下，片上光功率为44.7 μW，响应度超过1 A/W，雪崩增益为188，而暗电流比光电流低50倍以上。

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来源
《Optics Letters》 |2014年第15期|4525-4528|共4页
作者
Haike Zhu; Linjie Zhou; Rui YangXinwan LiJianping Chen;
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作者单位

State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

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正文语种英语
中图分类计量学;
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Enhanced near-infrared photodetection with avalanche gain in silicon microdisk resonators integrated with p-n diodes

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