EPR in single crystals of nickel doped ZnSiF6sdot;6H2O has been studied atKuband. The crystal field parameterDwas found to vary from (minus;0.1325plusmn;0.0010)cmminus;1at 4.2thinsp;deg;K to (minus;0.64plusmn;0.01)cmminus;1at 302thinsp;deg;K. The magnitude of part;D/part;Thad a maximum of (0.0027plusmn;0.0001)cmminus;1/deg;K, decreasing to about 0.0015 cmminus;1/deg;K at room temperature. The spinndash;lattice relaxation rate was determined to vary asT2from linewidth measurements between 77 and 325thinsp;deg;K. From the expression for the Raman process in the high temperature limit, the Debye temperature was deduced to be of the order of 100thinsp;deg;K.
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