Laser scanning thermoreflectance imaging system using galvanometric mirrors for temperature measurements of microelectronic devices

Grauby  S; Salhi  A; Rampnoux  JMMichel  HClaeys  WDilhaire  S

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Laser scanning thermoreflectance imaging system using galvanometric mirrors for temperature measurements of microelectronic devices

机译：Laser scanning thermoreflectance imaging system using galvanometric mirrors for temperature measurements of microelectronic devices

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摘要

We present a thermoreflectance imaging system using a focused laser sweeping the device under test with a scanner made of galvanometric mirrors. We first show that the spatial resolution of this setup is submicrometric, which makes it adapted to microelectronic thermal measurements. Then, we studied qualitative temperature variations on two dissipative structures constituted of thin (0.35 mu m) dissipative resistors, the distance between two resistors being equal to 0.8 or 10 mu m. This technique combines sensitivity and speed: it is faster than a point classical thermoreflectance technique and, in addition, more sensitive than a charge-coupled device thermoreflectance imaging technique. (C) 2007 American Institute of Physics.

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来源
《Review of Scientific Instruments》 |2007年第7期|74902-1-74902-8-0|共8页
作者
Grauby S; Salhi A; Rampnoux JMMichel HClaeys WDilhaire S;
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作者单位

Univ Bordeaux 1, CPMOH, F-33405 Talence, France;

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原文格式 PDF
正文语种英语
中图分类一般性问题;
关键词
THERMAL MEASUREMENTS; CIRCUITS; THERMOGRAPHY; REFLECTANCE; WAVELENGTHS; DEPENDENCE; RESOLUTION; SILICON; DIODE;

Laser scanning thermoreflectance imaging system using galvanometric mirrors for temperature measurements of microelectronic devices

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