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首页> 外文期刊>Optics Letters >Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme
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Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

机译：溶胶旋涂方案直接形成InN共掺杂p-ZnO/n-GaN异质结二极管

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摘要

In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73 × 10~(17) cm~(-3), a high mobility of 210 cm~2/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.
机译：在这项工作中，p-ZnO/n-GaN异质结二极管通过高性价比的溶胶旋涂和热退火处理的结合直接在Si衬底上形成。在InN/GaN/Si晶圆上旋涂的n-ZnO薄膜经过适当的退火时间热处理后转化为p型极性。X射线衍射（XRD）分析表明，InN共掺杂ZnO薄膜在（002）方向上具有优先取向的标准六方纤锌矿结构。（002）峰的强度随着退火时间的进一步延长而降低，表明掺杂剂的掺入量更大，X射线光电子能谱和低温光致发光也证实了这一点。霍尔和电阻率测量验证了我们的p型ZnO薄膜具有3.73 × 10~（17） cm~（-3）的高载流子浓度，210 cm~2/Vs的高迁移率和0.079 Ωcm的低电阻率。因此，所提出的p-ZnO/n-GaN异质结二极管显示出典型p-n结的良好电流整流，因此通过修正的Shockley方程很好地描述了测量的电流与电压（I-V）的特性。这里展示的p-ZnO/n-GaN异质结的制备研究为生产具有成本效益的ZnO基光电器件带来了有益的进展。

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  • 来源
    《Optics Letters》 |2014年第4期|805-808|共4页
  • 作者

    Chun-Ying Huang; Ya-Ju Lee; Tai-Yuan LinShao-Lun ChangJan-Tian LianHsiu-Mei LinNie-Chuan ChenYing-Jay Yang;

  • 作者单位

    Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan;

    Institute of Optoelectronic Sciences, National Taiwan Ocean University, 2, Pei-Ning Road, Keelung 202, Taiwan;

    Institute of Bioscience and Biotechnology, National Taiwan Ocean University, 2, Pei-Ning Road, Keelung 202, TaiwanInstitute of Electro-Optical Engineering, Chang Gung University, Wen-Hwa 1st Road, Tao-Yuan 333, TaiwanInstitute of Electronics Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan;

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  • 正文语种 英语
  • 中图分类 计量学;
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